Organometallic Molecules for Semiconductor Fabrication [and Discussion]

D. V. Shenai-Khatkhate, Marjory B. Parker, A. E. D. McQueen, J. B. Mullin, D. J. Cole-Hamilton, P. Day

Abstract

Adduct purification of metal alkyls for use in metal-organic vapour-phase epitaxy is described and shown to give high purity alkyls of Al, Ga, In, Cd, Zn and Te. In most cases involatile Lewis bases are used to form dissociable adducts, but for tellurium alkyls, halides of mercury or cadmium are used. Alternative source materials such as higher alkyls, volatile adducts and mixed alkyls are discussed and new results on the stability of mixed alkyls of tellurium are presented.

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